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P4C1981-25CMB, Microcircuit Memory with NSN 5962-01-359-0333 by Pyramid Semiconductor Corp - RFQ Now

Mfg Part Number: P4C1981-25CMB Alternate P/N: P4C198125CMB
NSN : 5962-01-359-0333 NIIN : 013590333
CAGE Code : 3DTT2 Manufacturer: Pyramid Semiconductor Corp
Item Name : Microcircuit Memory FSC : 5962 Microcircuits Electronic

Thank you for your interest in the NSN part P4C1981-25CMB. This item was manufactured by Pyramid Semiconductor Corp and is a Microcircuit Memory component with the NSN 5962-01-359-0333. This P4C1981-25CMB is available for immediate purchase, and we would be happy to provide you with a quick quotation for your comparisons. To begin, please fill out and submit an Instant RFQ form provided on this page. After receiving your request, an account manager will immediately start crafting a competitive quote that reflects your individual requirements.

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Stacked Purchasing offers P4C1981-25CMB with various CAGE Code 3DTT2 parts from Pyramid Semiconductor Corp, one of the manufacturers on our thoroughly vetted approved vendor list. Whether it is 5962-01-359-0333 or any other component that we distribute, we stand by the quality of our products. Stacked Purchasing operates with AS9120B, ISO 9001:2015, and FAA AC 00-56B certification and accreditation, and we have an unmatched dedication to providing our customers with the best possible parts. Moreover, our team members take the time to identify customers' exact time requirements, and with our vast distribution network, we are agile in our shipping execution. Please get in touch with our team if you want to learn more about our services. We look forward to being your strategic sourcing partner.

NSN Information for Part Number P4C1981-25CMB with NSN 5962-01-359-0333, 5962013590333

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-359-0333

Item Description:

Microcircuit Memory

59620135903330NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
P4C1981-25CMB525

Characteristics Data of NSN 5962-01-359-0333, 5962013590333

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING385.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN21 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZERMEMORY DEVICE TYPERAM
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT

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